Low-Power and Highly Uniform Switching in $\hbox {ZrO}_{2}$ -Based ReRAM With a Cu Nanocrystal Insertion Layer

In this letter, the insertion of a Cu nanocrystal (NC) layer between the Pt electrode and ZrO₂ film is proposed as an effective method to improve resistive switching properties in the ZrO₂-based resistive switching memory. This Cu/ZrO₂:Cu/Cu NC/Pt memory exhibits asymmetric nonpolar resistive switching behavior, low operating voltage (<; 1.2 V), low Reset current (<; 50 μA), and high uniformity of resistance switching. The switching mechanism is believed to be related with the formation and rupture of conductive filament. The NC-induced electrical field enhancement has the benefit to accelerate and control the CF formation process, thus leading to low-switching threshold voltage and high uniformity.