• DocumentCode
    1342516
  • Title

    Circuit Modeling of Single-Event Transient Pulse Stretching in Digital CMOS

  • Author

    Tuinenga, Paul W. ; Massengill, Lloyd W.

  • Author_Institution
    Inst. for Space & Defense Electron., Nashville, TN, USA
  • Volume
    56
  • Issue
    6
  • fYear
    2009
  • Firstpage
    3165
  • Lastpage
    3171
  • Abstract
    Propagation characteristics of SET pulses are modeled using circuit simulation by including parasitic elements from the process. Recently observed SET signatures in SOI and bulk CMOS are explained in terms of layout considerations.
  • Keywords
    CMOS digital integrated circuits; MOSFET; radiation effects; silicon-on-insulator; NMOS transistor; SET pulse; SOI; Si-SiO2; circuit modeling; digital CMOS; radiation effect; single event transient; single-event transient pulse stretching; CMOS digital integrated circuits; CMOS logic circuits; CMOS process; Circuit simulation; Circuit synthesis; Pulse circuits; Pulse compression methods; Pulse inverters; Pulse measurements; Semiconductor device modeling; Circuit simulation; pulse broadening; pulse propagation; pulse stretching; single event transients; single events;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2034152
  • Filename
    5341379
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1342516