Title :
Circuit Modeling of Single-Event Transient Pulse Stretching in Digital CMOS
Author :
Tuinenga, Paul W. ; Massengill, Lloyd W.
Author_Institution :
Inst. for Space & Defense Electron., Nashville, TN, USA
Abstract :
Propagation characteristics of SET pulses are modeled using circuit simulation by including parasitic elements from the process. Recently observed SET signatures in SOI and bulk CMOS are explained in terms of layout considerations.
Keywords :
CMOS digital integrated circuits; MOSFET; radiation effects; silicon-on-insulator; NMOS transistor; SET pulse; SOI; Si-SiO2; circuit modeling; digital CMOS; radiation effect; single event transient; single-event transient pulse stretching; CMOS digital integrated circuits; CMOS logic circuits; CMOS process; Circuit simulation; Circuit synthesis; Pulse circuits; Pulse compression methods; Pulse inverters; Pulse measurements; Semiconductor device modeling; Circuit simulation; pulse broadening; pulse propagation; pulse stretching; single event transients; single events;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2034152
