Title :
Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides
Author :
Arora, Rajan ; Rozen, John ; Fleetwood, Daniel M. ; Galloway, Kenneth F. ; Zhang, C. Xuan ; Han, Jisheng ; Dimitrijev, Sima ; Kong, Fred ; Feldman, Leonard C. ; Pantelides, Sokrates T. ; Schrimpf, Ronald D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci. (EECS), Vanderbilt Univ., Nashville, TN, USA
Abstract :
Silicon-carbide-based MOS capacitors were formed on either 3C (epitaxial on Si) or 4H substrates and using SiO2 gate dielectrics both with and without interfacial nitrogen. The charge trapping properties of these structures were examined after exposure to ionizing radiation. In all cases interfacial nitrogen results in improved trap density and increased oxide charge trapping. For equivalent nitrogen content, 3C-based devices exhibit more charge trapping than the 4H-based equivalents.
Keywords :
MOS capacitors; X-ray effects; electron traps; hole traps; interface states; nitridation; silicon compounds; wide band gap semiconductors; 3C-SiC substrate; 3C-based devices; 4H-SiC substrate; SiC; SiO2 gate dielectrics; SiO2-SiC; X-ray radiation effects; charge trapping properties; interface trap density; interface traps; interfacial nitrogen; ionizing radiation; nitridation process; nitrided gate oxides; silicon-carbide-based MOS capacitors; Astronomy; Dielectric substrates; Electron mobility; Electron traps; Ionizing radiation; MOS capacitors; Nitrogen; Physics; Silicon carbide; Thermal conductivity; 3C-SiC; 4H-SiC; ${rm N}_{2}{rm O}$; MOS; NO; POA;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2031604
