• DocumentCode
    1342557
  • Title

    Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials

  • Author

    Dodds, N.A. ; Reed, R.A. ; Mendenhall, M.H. ; Weller, R.A. ; Clemens, M.A. ; Dodd, P.E. ; Shaneyfelt, M.R. ; Vizkelethy, G. ; Schwank, J.R. ; Ferlet-Cavrois, V. ; Adams, J.H., Jr. ; Schrimpf, R.D. ; King, M.P.

  • Author_Institution
    Vanderbilt Univ., Nashville, TN, USA
  • Volume
    56
  • Issue
    6
  • fYear
    2009
  • Firstpage
    3172
  • Lastpage
    3179
  • Abstract
    Direct charge collection measurements are presented, which prove that the presence of tungsten near sensitive volumes leads to extreme charge collection events through nuclear reactions. We demonstrate that, for a fixed incident particle linear energy transfer (LET), increasing particle energy beyond a certain point causes a decrease in nuclear reaction-induced charge collection. This suggests that a worst-case energy exists for single-event effect (SEE) susceptibility, which depends on the technology, device layout, and the incident ions´ fixed LET value. A Monte Carlo approach for identifying the worst-case energy is applied to certain bulk-Si and silicon-on-insulator (SOI) technologies. Simulation results suggest that the decrease in charge collection beyond the worst-case energy occurs because the secondary particles produced from the high-energy nuclear reactions have less mass and higher energy and are therefore less ionizing than those produced by lower-energy reactions.
  • Keywords
    Monte Carlo methods; heavy ion-nucleus reactions; integrated circuits; ion beam effects; nuclear spallation; silicon-on-insulator; (14N, X); (20Ne, X); (56Fe, X); IC BEOL materials; IC back-end-of-line materials; Monte Carlo approach; Si; charge generation; heavy ion irradiation; high-energy nuclear reactions; incident particle linear energy transfer; lower-energy reactions; nuclear reaction-induced direct charge collection; nuclear spallation; silicon technology; silicon-on-insulator technology; single-event effect susceptibility; tungsten; Atomic measurements; Charge measurement; Current measurement; Energy exchange; Monte Carlo methods; NASA; Nuclear measurements; Nuclear power generation; Silicon on insulator technology; Tungsten; Charge collection; MRED; Monte Carlo; high-Z; indirect ionization; nuclear reactions; secondary particles; worst-case energy;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2034160
  • Filename
    5341385