Laser Verification of Charge Sharing in a 90 nm Bulk CMOS Process

Author

Amusan, O.A. ; Casey, M.C. ; Bhuva, B.L. ; McMorrow, D. ; Gadlage, M.J. ; Melinger, J.S. ; Massengill, L.W.

Author_Institution

Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3065

Lastpage

3070

Abstract

Charge-collection circuits were designed and fabricated in a 90 nm bulk CMOS process to examine the effects of charge sharing in sub-100 nm bulk CMOS processes. Laser interrogation of the charge-collection circuits provide the first direct verification of sub-100 nm charge sharing effects and show the nodal spacing dependence of charge sharing. 3-D TCAD simulations corroborate the laser data and also show the use of guard-diodes as an effective charge sharing mitigation technique.

Keywords

CMOS integrated circuits; laser materials processing; radiation hardening (electronics); technology CAD (electronics); 3D TCAD simulation; bulk CMOS process; charge sharing mitigation technique; charge-collection circuits; guard-diodes; laser interrogation; laser verification; nodal spacing dependence; single event characterization; size 100 nm; size 90 nm; CMOS process; CMOS technology; Capacitors; Charge measurement; Circuit simulation; Current measurement; Latches; MOS devices; Radiation hardening; Voltage; Charge collection; NMOS; charge sharing; guard-diodes; guard-rings; nodal spacing; single event characterization; single event charge collection;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2032285

Filename

5341386