The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays

Author

Silvestri, M. ; Gerardin, Simone ; Schrimpf, R.D. ; Fleetwood, D.M. ; Faccio, F. ; Paccagnella, Alessandro

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova, Italy

Volume

56

Issue

6

fYear

2009

Firstpage

3244

Lastpage

3249

Abstract

We have investigated the effects of biased and unbiased X-ray irradiation on the subsequent time-dependent dielectric breakdown (TDDB) of 130-nm MOSFETs irradiated up to 1Mrad(SiO₂). We found a small but measurable increase in TDDB lifetime after irradiation at the worst-case irradiation bias. The influence of radiation bias on subsequent TDDB is more significant in the PMOSFETs than the NMOSFETs. The increased TDDB lifetime and the irradiation-bias dependence are attributed to the influence of radiation-induced traps on the stressing current during the reliability testing.

Keywords

MOSFET; X-ray effects; electric breakdown; MOSFET; X-ray irradiation; reliability testing; time-dependent dielectric breakdown; CMOS technology; Capacitors; Dielectric breakdown; Dielectric measurements; Electric breakdown; Helium; Life testing; MOSFETs; Stress; X-rays; CMOS; dielectric breakdown; reliability; time-dependent dielectric breakdown (TDDB); total dose; total ionizing dose (TID);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2033360

Filename

5341387