A 60 GHz Broadband Low-Noise Amplifier With Variable-Gain Control in 65 nm CMOS

Author

Hsieh, Yi-Keng ; Kuo, Jing-Lin ; Wang, Huei ; Lu, Liang-Hung

Author_Institution

Grad. Inst. of Electron. Eng. & Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

21

Issue

11

fYear

2011

Firstpage

610

Lastpage

612

Abstract

A 60 GHz low-noise amplifier (LNA) implemented in a 65 nm CMOS process is presented. Due to the use of a gain-boosted input stage and binary controlled attenuators, the LNA exhibits a broadband response and four programmable gain levels from 18.9 to 7.9 dB while maintaining impedance matching at the 60 GHz frequency band. The fabricated circuit consumes a dc current of 25 mA from a 1.8 V supply.

Keywords

CMOS analogue integrated circuits; attenuators; field effect MIMIC; impedance matching; low noise amplifiers; millimetre wave amplifiers; wideband amplifiers; CMOS process; LNA; binary controlled attenuators; broadband low-noise amplifier; current 25 mA; frequency 60 GHz; gain 18.9 dB to 7.9 dB; gain-boosted input stage; impedance matching; programmable gain levels; size 65 nm; variable-gain control; voltage 1.8 V; Attenuators; Broadband communication; CMOS integrated circuits; Linearity; Noise measurement; Attenuators; broadband; low-noise amplifiers (LNAs); millimeter-wave; positive feedback; variable-gain amplifiers;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2167134

Filename

6035999