Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

Author

Gadlage, Matthew J. ; Ahlbin, Jonathan R. ; Ramachandran, Vishwanath ; Gouker, Pascale ; Dinkins, Cody A. ; Bhuva, Bharat L. ; Narasimham, Balaji ; Schrimpf, Ronald D. ; McCurdy, Michael W. ; Alles, Michael L. ; Reed, Robert A. ; Mendenhall, Marcus H. ; M

Author_Institution

Vanderbilt Univ., Nashville, TN, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3115

Lastpage

3121

Abstract

Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.

Keywords

bipolar transistors; semiconductor device measurement; silicon-on-insulator; transient analysis; SET pulse-width measurements; SOI technology; diffusion; drift component; parasitic bipolar transistor parameters; silicon on insulator; single-event transient pulse widths; temperature dependence; CMOS technology; Circuit testing; Pulse circuits; Pulse inverters; Pulse measurements; Pulse width modulation inverters; Silicon on insulator technology; Space vector pulse width modulation; Temperature dependence; Temperature distribution; Heavy ions; ion radiation effects; silicon-on-insulator technology; single event transients; single event upset (SEU);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2034150

Filename

5341391