Title :
High on-off ratio and responsivity in integrated optically controlled HEMT
Author :
Sakai, T. ; Shimomura, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
fDate :
3/1/1998 12:00:00 AM
Abstract :
High on-off ratio and high responsivity was obtained in a novel integrated optically controlled HEMT. The integrated structure of the device was composed of a p-i-n photodiode region and a HEMT region. These two regions were bonded using direct wafer bonding technique. When a laser light with a wavelength of 1.55 μm was irradiated on the absorption region, on-off ratio of 12 dB and a responsivity of more than 300 A/W was obtained. This device is very attractive as the high efficiency optoelectronic (OE) transformer directly integrated on the LSI circuits.
Keywords :
HEMT integrated circuits; integrated optoelectronics; large scale integration; p-i-n photodiodes; wafer bonding; 1.55 mum; HEMT region; LSI circuits; absorption region; direct wafer bonding technique; high efficiency optoelectronic transformer; high on-off ratio; integrated optically controlled HEMT; integrated structure; laser light; on-off ratio; p-i-n photodiode region; responsivity; Absorption; Cutoff frequency; FETs; HEMTs; Integrated circuit interconnections; Integrated optics; Optical control; Optical interconnections; Photodetectors; Wafer bonding;
Journal_Title :
Photonics Technology Letters, IEEE
