Title :
Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process
Author :
Gadlage, Matthew J. ; Gouker, Pascale ; Bhuva, Bharat L. ; Narasimham, Balaji ; Schrimpf, Ronald D.
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
Abstract :
Heavy- ion-induced single events transients (SETs) in advanced digital circuits are a significant reliability issue for space-based systems. SET pulse widths in silicon-on-insulator (SOI) technologies are often significantly shorter than those in comparable bulk technologies. In this paper, heavy-ion-induced digital single-event transient measurements are presented for a 180-nm fully depleted SOI technology. Upset cross-sections for this technology with and without body-ties are analyzed using 3-D TCAD simulations. Pulse broadening is shown to lengthen the measured SET pulse widths significantly for the circuit without body contacts.
Keywords :
digital circuits; silicon-on-insulator; transient analysis; 3-D TCAD simulations; SET pulse widths; SOI technology; Si; digital circuits; heavy-ion-induced digital single event transient; pulse broadening; space-based systems; Circuit testing; Latches; Pulse circuits; Pulse inverters; Pulse measurements; Pulse width modulation inverters; Semiconductor device measurement; Silicon on insulator technology; Space technology; Space vector pulse width modulation; Heavy ions; ion radiation effects; silicon-on-insulator technology; single event transient; single event upset (SEU);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2033688
