Heavy-Ion-Induced Digital Single Event Transients in a 180 nm Fully Depleted SOI Process

Author

Gadlage, Matthew J. ; Gouker, Pascale ; Bhuva, Bharat L. ; Narasimham, Balaji ; Schrimpf, Ronald D.

Author_Institution

Vanderbilt Univ., Nashville, TN, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3483

Lastpage

3488

Abstract

Heavy- ion-induced single events transients (SETs) in advanced digital circuits are a significant reliability issue for space-based systems. SET pulse widths in silicon-on-insulator (SOI) technologies are often significantly shorter than those in comparable bulk technologies. In this paper, heavy-ion-induced digital single-event transient measurements are presented for a 180-nm fully depleted SOI technology. Upset cross-sections for this technology with and without body-ties are analyzed using 3-D TCAD simulations. Pulse broadening is shown to lengthen the measured SET pulse widths significantly for the circuit without body contacts.

Keywords

digital circuits; silicon-on-insulator; transient analysis; 3-D TCAD simulations; SET pulse widths; SOI technology; Si; digital circuits; heavy-ion-induced digital single event transient; pulse broadening; space-based systems; Circuit testing; Latches; Pulse circuits; Pulse inverters; Pulse measurements; Pulse width modulation inverters; Semiconductor device measurement; Silicon on insulator technology; Space technology; Space vector pulse width modulation; Heavy ions; ion radiation effects; silicon-on-insulator technology; single event transient; single event upset (SEU);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2033688

Filename

5341394