Heavy Ion Testing and Single Event Upset Rate Prediction Considerations for a DICE Flip-Flop

Author

Warren, Kevin M. ; Sternberg, Andrew L. ; Black, Jeffrey D. ; Weller, Robert A. ; Reed, Robert A. ; Mendenhall, Marcus H. ; Schrimpf, Ronald D. ; Massengil, Lloyd W.

Author_Institution

Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3130

Lastpage

3137

Abstract

Monte-Carlo simulation using the MRED software suite, coupled with SPICE analysis, is used to identify internal mechanisms of SEU in DICE flip-flops. Low frequency cross-section measurements and simulations identify multiple-node charge collection SEU mechanisms as the dominant contributor. An increasingly isotropic response is predicted with increasing frequency due to latching of internal single-node transients near clock boundaries. Implications for heavy ion testing and SEU rate prediction are presented.

Keywords

CMOS integrated circuits; Monte Carlo methods; flip-flops; radiation hardening (electronics); CMOS; DICE flip-flop; MRED software suite; Monte-Carlo simulation; SEU rate prediction; SPICE analysis; clock boundaries; heavy ion testing; internal single-node transient; low frequency cross-section measurement; multiple-node charge collection; radiation hardening; Analytical models; Circuits; Clocks; Flip-flops; Frequency measurement; Predictive models; Redundancy; SPICE; Single event upset; Testing; Geant4; MRED; RHBD; SER; SEU;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2034146

Filename

5341406