• DocumentCode
    1342715
  • Title

    Single-Event Transients Effects on Dynamic Comparators in a 90 nm CMOS Triple-Well and Dual-Well Technology

  • Author

    Wang, Tao ; Chen, Li ; Dinh, Anh ; Bhuva, Bharat

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Saskatchewan, Saskatoon, SK, Canada
  • Volume
    56
  • Issue
    6
  • fYear
    2009
  • Firstpage
    3556
  • Lastpage
    3560
  • Abstract
    Single-Event Transient effects on dynamic comparators using dual-well and triple-well technologies in a 90-nm CMOS process are investigated using pulsed-laser and schematic simulations. Results show that circuit vulnerability is a strong function of technology, circuit topology, and individual transistor currents.
  • Keywords
    CMOS integrated circuits; circuit simulation; comparators (circuits); laser beam applications; CMOS dual-well technology; CMOS triple-well technology; circuit topology; circuit vulnerability; dynamic comparators; pulsed-laser simulation; single-event transients effects; transistor currents; CMOS process; CMOS technology; Capacitance; Circuit simulation; Circuit testing; Isolation technology; Laser beams; Optical pulses; Space technology; Transistors; Dual-well process; dynamic comparator; single-event transients (SETs); triple-well process;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2033920
  • Filename
    5341407
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1342715