Title :
Single-Event Transients Effects on Dynamic Comparators in a 90 nm CMOS Triple-Well and Dual-Well Technology
Author :
Wang, Tao ; Chen, Li ; Dinh, Anh ; Bhuva, Bharat
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Saskatchewan, Saskatoon, SK, Canada
Abstract :
Single-Event Transient effects on dynamic comparators using dual-well and triple-well technologies in a 90-nm CMOS process are investigated using pulsed-laser and schematic simulations. Results show that circuit vulnerability is a strong function of technology, circuit topology, and individual transistor currents.
Keywords :
CMOS integrated circuits; circuit simulation; comparators (circuits); laser beam applications; CMOS dual-well technology; CMOS triple-well technology; circuit topology; circuit vulnerability; dynamic comparators; pulsed-laser simulation; single-event transients effects; transistor currents; CMOS process; CMOS technology; Capacitance; Circuit simulation; Circuit testing; Isolation technology; Laser beams; Optical pulses; Space technology; Transistors; Dual-well process; dynamic comparator; single-event transients (SETs); triple-well process;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2033920
