Title :
Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs
Author :
Pellish, Jonathan A. ; Reed, Robert A. ; McMorrow, Dale ; Vizkelethy, Gyorgy ; Cavrois, Veronique Ferlet ; Baggio, Jacques ; Paillet, Philippe ; Duhamel, Olivier ; Moen, Kurt A. ; Phillips, Stanley D. ; Diestelhorst, Ryan M. ; Cressler, John D. ; Sutton,
Author_Institution :
Flight Data Syst. & Radiat. Effects branch, NASA Goddard Space Flight Center, Greenbelt, MD, USA
Abstract :
Silicon-germanium heterojunction bipolar transistor (SiGe HBT) heavy ion-induced current transients are measured using Sandia National Laboratories´ microbeam and high- and low-energy broadbeam sources at the Grand Acce¿le¿rateur National d´Ions Lourds, Caen, France, and the University of Jyva¿skyla¿, Finland. The data were captured using a custom broadband IC package and real-time digital phosphor oscilloscopes with at least 16 GHz of analog bandwidth. These data provide detailed insight into the effects of ion strike location, range, and LET.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; integrated circuit packaging; ion beam effects; oscilloscopes; semiconductor device reliability; semiconductor materials; transients; Sandia National Laboratories; SiGe; University of Jyva¿skyla¿; broadbeam-induced transients; custom broadband IC package; frequency 16 GHz; heavy ion microbeam induced current transients; high-energy broadbeam sources; ion irradiation effects; linear energy transfers; low-energy broadbeam sources; real-time digital phosphor oscilloscopes; reliability; silicon-germanium heterojunction bipolar transistor; Analog integrated circuits; Current measurement; Digital integrated circuits; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit packaging; Laboratories; Oscilloscopes; Phosphors; Silicon germanium; Heavy ion; real-time oscilloscope; silicon-germanium heterojunction bipolar transistor (SiGe HBT); transient;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2034158
