• DocumentCode
    1342744
  • Title

    The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs

  • Author

    Moran, Jeffrey T. ; McClory, John W. ; Petrosky, James C. ; Farlow, Gary C.

  • Author_Institution
    RD-CXT, Defense Threat Reduction Agency, Kirtland AFB, NM, USA
  • Volume
    56
  • Issue
    6
  • fYear
    2009
  • Firstpage
    3223
  • Lastpage
    3228
  • Abstract
    Al0.27Ga0.73N/GaN HFETs were electron irradiated at ~ 80 K. The gate leakage and transistor current were measured and compared to theoretical tunneling models. The results are consistent with previous work but explicitly show that radiation produces point defects in the AlGaN that are positively charged at low temperature.
  • Keywords
    III-V semiconductors; aluminium compounds; electron beam effects; gallium compounds; high electron mobility transistors; point defects; tunnelling; wide band gap semiconductors; Al0.27Ga0.73N-GaN; HFET; electrical properties; electron radiation; gate leakage current; point defects; transistor current; tunneling models; Aluminum gallium nitride; Current measurement; Electrons; Gallium nitride; Gate leakage; HEMTs; Leakage current; MODFETs; Temperature; Tunneling; Electron irradiation; gallium nitride; heterojunction field effect transistors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2033694
  • Filename
    5341411
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1342744