Title :
The Effects of Temperature and Electron Radiation on the Electrical Properties of AlGaN/GaN HFETs
Author :
Moran, Jeffrey T. ; McClory, John W. ; Petrosky, James C. ; Farlow, Gary C.
Author_Institution :
RD-CXT, Defense Threat Reduction Agency, Kirtland AFB, NM, USA
Abstract :
Al0.27Ga0.73N/GaN HFETs were electron irradiated at ~ 80 K. The gate leakage and transistor current were measured and compared to theoretical tunneling models. The results are consistent with previous work but explicitly show that radiation produces point defects in the AlGaN that are positively charged at low temperature.
Keywords :
III-V semiconductors; aluminium compounds; electron beam effects; gallium compounds; high electron mobility transistors; point defects; tunnelling; wide band gap semiconductors; Al0.27Ga0.73N-GaN; HFET; electrical properties; electron radiation; gate leakage current; point defects; transistor current; tunneling models; Aluminum gallium nitride; Current measurement; Electrons; Gallium nitride; Gate leakage; HEMTs; Leakage current; MODFETs; Temperature; Tunneling; Electron irradiation; gallium nitride; heterojunction field effect transistors;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2033694
