Title :
The Use of a Dose-Rate Switching Technique to Characterize Bipolar Devices
Author :
Boch, Jérôme ; Velo, Yago Gonzalez ; Saigné, Frédéric ; Roche, Nicolas J H ; Schrimpf, Ronald D. ; Vaillé, Jean-Roch ; Dusseau, Laurent ; Chatry, Christian ; Lorfèvre, Eric ; Ecoffet, Robert ; Touboul, Antoine D.
Author_Institution :
IES, Univ. Montpellier 2, Montpellier, France
Abstract :
The enhanced radiation sensitivity exhibited at low dose rate by many bipolar devices remains one of the main concerns for spacecraft reliability. As an accelerated test technique, a new approach based on dose-rate switching experiments has been proposed to characterize bipolar devices. The foundations of this approach are detailed and guidelines for its use are given.
Keywords :
avionics; bipolar transistors; life testing; radiation hardening (electronics); semiconductor device testing; accelerated test technique; bipolar devices; bipolar transistors; dose-rate switching technique; radiation sensitivity; spacecraft reliability; Circuit testing; Degradation; Guidelines; Integrated circuit reliability; Integrated circuit testing; Life estimation; Qualifications; Space vehicles; Switching circuits; Temperature; Accelerated test method; dose rate; integrated circuits; switching experiments; total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2033686
