Title :
On the use of MOS varactors in RF VCOs
Author :
Andreani, Pietro ; Mattisson, Sven
Author_Institution :
Dept. of Appl. Electron., Lund Univ., Sweden
fDate :
6/1/2000 12:00:00 AM
Abstract :
This paper presents two 1.8 GHz CMOS voltage-controlled oscillators (VCOs), tuned by an inversion-mode MOS varactor and an accumulation-mode MOS varactor, respectively. Both VCOs show a lower power consumption and a lower phase noise than a reference VCO tuned by a more commonly used diode varactor. The best overall performance is displayed by the accumulation-mode MOS varactor VCO. The VCOs were implemented in a standard 0.6 /spl mu/m CMOS process.
Keywords :
CMOS analogue integrated circuits; MOS capacitors; UHF integrated circuits; UHF oscillators; circuit tuning; integrated circuit noise; phase noise; varactors; voltage-controlled oscillators; 0.6 micron; 1.8 GHz; CMOS voltage-controlled oscillators; MOS varactors; RF CMOS VCO; accumulation-mode; inversion-mode; phase noise reduction; power consumption reduction; submicron CMOS process; CMOS process; CMOS technology; Capacitance; MOS capacitors; MOSFETs; Radio frequency; Semiconductor diodes; Varactors; Voltage; Voltage-controlled oscillators;
Journal_Title :
Solid-State Circuits, IEEE Journal of
