Process and Contamination Effects on the Single-Event Response of AlSb/InAs HEMTs

Author

DasGupta, Sandeepan ; McMorrow, Dale ; Reed, Robert A. ; Schrimpf, Ronald D. ; Boos, J. Brad ; Ramachandran, Vishwa

Author_Institution

Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA

Volume

57

Issue

6

fYear

2010

Firstpage

3262

Lastpage

3266

Abstract

We investigate the dependence of the single-event response of AlSb/InAs HEMTs on details of the doping, layer thicknesses, and contamination levels. The transconductance depends on the Δ-doping and layer thickness, which are shown to have the maximum impact on charge collection when the device is biased near the pinch-off voltage. In the on condition (near zero gate bias), the effect is minimal. The possible role of carbon contamination near the substrate-buffer heterointerface in reducing some of the longer transients is discussed.

Keywords

III-V semiconductors; aluminium compounds; contamination; high electron mobility transistors; indium compounds; semiconductor doping; AlSb-InAs; HEMT; carbon contamination effect; charge collection; contamination levels; doping layer thickness; high electron mobility transistor; pinch-off voltage; single-event response; substrate-buffer heterointerface; transconductance; Carbon; Contamination; HEMTs; MODFETs; Single event upset; Threshold voltage; Transient analysis; AlSb/InAs; TCAD; charge collection; high electron mobility transistors (HEMT); single event;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2075941

Filename

5594659