• DocumentCode
    1342806
  • Title

    Charge Enhancement Effects in 6H-SiC MOSFETs Induced by Heavy Ion Strike

  • Author

    Onoda, Shinobu ; Makino, Takahiro ; Iwamoto, Naoya ; Vizkelethy, Gyorgy ; Kojima, Kazutoshi ; Nozaki, Shinji ; Ohshima, Takeshi

  • Author_Institution
    Japan Atomic Energy Agency, Takasaki, Japan
  • Volume
    57
  • Issue
    6
  • fYear
    2010
  • Firstpage
    3373
  • Lastpage
    3379
  • Abstract
    The transient response of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with three different gates due to a single ion strike is studied. Comparing the experiment and numerical simulation, it is suggested that the charge enhancement is due to the bipolar effect. We find the bipolar gain depends on the quality of gate oxide. The impact of fixed charge in SiO2 and interface traps at SiC/SiO2 on the charge collection is discussed.
  • Keywords
    MOSFET; bipolar logic circuits; nuclear electronics; silicon compounds; SiO2-SiC; bipolar effect; charge collection; charge enhancement effect; interface traps; metal-oxide-semiconductor-field effect transistor; numerical simulation; silicon carbide; Ions; Logic gates; MOSFETs; Silicon carbide; Transient analysis; 6H-SiC; MOSFET; bipolar effect; single ion strike;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2010.2070076
  • Filename
    5594660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1342806