• DocumentCode
    1342810
  • Title

    Heavy Ion and High Energy Proton-Induced Single Event Transients in 90 nm Inverter, NAND and NOR Gates

  • Author

    Cannon, Ethan H. ; Cabanas-Holmen, Manuel

  • Author_Institution
    Boeing Co., Seattle, WA, USA
  • Volume
    56
  • Issue
    6
  • fYear
    2009
  • Firstpage
    3511
  • Lastpage
    3518
  • Abstract
    We measure heavy ion and proton-induced SETs in inverters, and NAND and NOR gates from a 90 nm RHBD library. NAND and NOR gates have higher SET cross section and generate wider pulses than inverters.
  • Keywords
    logic gates; nanoelectronics; radiation hardening; NAND gates; NOR gates; RHBD library; heavy ion SET inverters; high energy proton-induced single event transients; size 90 nm; Circuit testing; Delay; Filters; Libraries; Logic gates; Pulse generation; Pulse inverters; Pulse width modulation inverters; Radiation hardening; Space vector pulse width modulation; Pulse width; radiation event; radiation hardened by design (RHBD); single event transient (SET);
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2034377
  • Filename
    5341420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1342810