Title :
Heavy Ion and High Energy Proton-Induced Single Event Transients in 90 nm Inverter, NAND and NOR Gates
Author :
Cannon, Ethan H. ; Cabanas-Holmen, Manuel
Author_Institution :
Boeing Co., Seattle, WA, USA
Abstract :
We measure heavy ion and proton-induced SETs in inverters, and NAND and NOR gates from a 90 nm RHBD library. NAND and NOR gates have higher SET cross section and generate wider pulses than inverters.
Keywords :
logic gates; nanoelectronics; radiation hardening; NAND gates; NOR gates; RHBD library; heavy ion SET inverters; high energy proton-induced single event transients; size 90 nm; Circuit testing; Delay; Filters; Libraries; Logic gates; Pulse generation; Pulse inverters; Pulse width modulation inverters; Radiation hardening; Space vector pulse width modulation; Pulse width; radiation event; radiation hardened by design (RHBD); single event transient (SET);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2034377
