DocumentCode
1342819
Title
Structural and optical properties of ZnO thin films prepared by sol-gel method
Author
Khanlary, M.R. ; Isazadeh, S.
Author_Institution
Phys. Dept., Imam Khomeini Int. Univ., Gazvin, Iran
Volume
6
Issue
9
fYear
2011
fDate
9/1/2011 12:00:00 AM
Firstpage
767
Lastpage
769
Abstract
In this Letter thin films of zinc oxide (ZnO) are prepared by sol-gel method and deposited on glass substrate to evaluate structural and optical properties of the film. The films were grown at different thicknesses in the range of 100-180-nm. The properties of layers were characterised using X-ray diffractometer (XRD), atomic force microscope (AFM) and optical spectrophotometer to evaluate the quality of the thin film for photovoltaic applications. The results from XRD pattern revealed that the grown films exhibit wurtzite structure with (002) preferential plane. The results from AFM data revealed that the films had nano-sized grains with a grain size from-25 to 60-nm depending on the film thickness. The optical spectrophotometer studies exhibited direct allowed transition with an energy bandgap of 3.12-3.02-eV for films with thicknesses of 100-180-nm, respectively. The refractive index as well as extinction coefficient of films was also measured.
Keywords
II-VI semiconductors; X-ray diffraction; atomic force microscopy; crystal structure; energy gap; extinction coefficients; grain size; refractive index; semiconductor growth; semiconductor thin films; sol-gel processing; spin coating; visible spectra; wide band gap semiconductors; zinc compounds; AFM; SiO2; X-ray diffraction; XRD; ZnO; atomic force microscopy; energy bandgap; extinction coefficient; film thickness; grain size; optical properties; optical spectrophotometry; photovoltaics; refractive index; size 100 nm to 180 nm; sol-gel method; structural properties; thin films; wurtzite structure;
fLanguage
English
Journal_Title
Micro & Nano Letters, IET
Publisher
iet
ISSN
1750-0443
Type
jour
DOI
10.1049/mnl.2011.0408
Filename
6036029
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