Title :
Number and length on the temperature sensitivity of the threshold current in InGaAsP-InP MQW lasers
Author :
Prosyk, Kelvin ; Simmons, John G. ; Evans, J.D.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
fDate :
3/1/1998 12:00:00 AM
Abstract :
The results of a large-scale study of the temperature sensitivity of the CW threshold current are presented. The well number and length are systematically varied in a set of 175 lasers, with multiple identical devices to ensure the statistical validity of the data. The results are analyzed using the recently proposed Tmax relation. A simple model is used to derive the Tmax relation and understand the experimental results. A correlation is found between threshold and efficiency, and the temperature sensitivity of the threshold current density is related to the optical gain, optical loss, and current loss mechanisms within the lasers
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; semiconductor device models; sensitivity; thermo-optical effects; CW threshold current; InGaAsP-InP MQW lasers; Tmax relation; current loss mechanisms; large-scale study; optical gain; optical loss; statistical validity; temperature sensitivity; threshold current; threshold current density; well number; Laser modes; Optical losses; Optical sensors; Quantum well devices; Semiconductor lasers; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
