Number and length on the temperature sensitivity of the threshold current in InGaAsP-InP MQW lasers

Author

Prosyk, Kelvin ; Simmons, John G. ; Evans, J.D.

Author_Institution

Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada

Volume

34

Issue

3

fYear

1998

fDate

3/1/1998 12:00:00 AM

Firstpage

535

Lastpage

539

Abstract

The results of a large-scale study of the temperature sensitivity of the CW threshold current are presented. The well number and length are systematically varied in a set of 175 lasers, with multiple identical devices to ensure the statistical validity of the data. The results are analyzed using the recently proposed T_max relation. A simple model is used to derive the T_max relation and understand the experimental results. A correlation is found between threshold and efficiency, and the temperature sensitivity of the threshold current density is related to the optical gain, optical loss, and current loss mechanisms within the lasers

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; semiconductor device models; sensitivity; thermo-optical effects; CW threshold current; InGaAsP-InP MQW lasers; T_max relation; current loss mechanisms; large-scale study; optical gain; optical loss; statistical validity; temperature sensitivity; threshold current; threshold current density; well number; Laser modes; Optical losses; Optical sensors; Quantum well devices; Semiconductor lasers; Temperature dependence; Temperature distribution; Temperature sensors; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.661463

Filename

661463