Theoretical model for intravalley and intervalley free-carrier absorption in semiconductor lasers: beyond the classical Drude model

Author

Tsai, Chin-Yi ; Tsai, Chin-Yao ; Chen, Chih-Hsiung ; Sung, Tien-Li ; Wu, Tsu-Yin ; Shih, Fang-Ping

Author_Institution

Dept. of Electron. & Electr. Eng., De Monfort Univ., Leicester, UK

Volume

34

Issue

3

fYear

1998

fDate

3/1/1998 12:00:00 AM

Firstpage

552

Lastpage

559

Abstract

Free-carrier absorption is calculated from the second-order perturbation theory of quantum mechanics by considering the interactions between carriers and polar optical phonons, deformation potential optical phonons, deformation potential acoustic phonons, piezoelectric acoustic phonons, and charged impurities in the intravalley transition and the intervalley transition. A formula is derived from our theoretical model for the coefficient of free-carrier absorption by incorporating the state-filling effect and the degenerate carrier distribution. Our results indicate that the classical Drude model is inadequate to describe many features of the free-carrier absorption. Alternatively, our theoretical model may provide an efficient method for investigating the effect of free-carrier absorption on the functionality or performance of the related optoelectronic device

Keywords

laser theory; perturbation theory; phonons; semiconductor device models; semiconductor lasers; charged impurities; classical Drude model; deformation potential acoustic phonons; deformation potential optical phonons; degenerate carrier distribution; free-carrier absorption; intervalley free-carrier absorption; intervalley transition; intravalley free-carrier absorption; intravalley transition; optoelectronic device; piezoelectric acoustic phonons; polar optical phonons; quantum mechanics; second-order perturbation theory; semiconductor lasers; state-filling effect; theoretical model; Absorption; Electron optics; Laser modes; Laser theory; Optical control; Optical losses; Optical refraction; Optical variables control; Phonons; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.661466

Filename

661466