Title :
Resistance-switching behaviour in ZnO-Nb2O5 thin films for non-volatile memory application
Author :
Cheng-Hsing Hsu ; Shu-Fong Yan
Author_Institution :
Dept. of Electr. Eng., Nat. United Univ., Miaoli, Taiwan
fDate :
9/1/2011 12:00:00 AM
Abstract :
The microstructure and resistance switching characteristics of polycrystalline ZnO-Nb2O5 thin films prepared by the sol-gel method on indium tin oxide (ITO)/glass substrates at different annealing temperatures followed by annealing in oxygen have been investigated. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. The Pt/ZnO-Nb2O5/ITO/glass device exhibits reversible and steady bistable resistance switching behaviour with a narrow dispersion of resistance states and switching voltages. The resistance ratios of high-resistance state to low-resistance state were in the range of 1-2 orders of magnitude within 200 test cycles.
Keywords :
II-VI semiconductors; annealing; crystal microstructure; electric resistance; electrical conductivity transitions; niobium compounds; random-access storage; semiconductor-insulator boundaries; sol-gel processing; thin films; wide band gap semiconductors; zinc compounds; ITO-SiO2; ZnO-Nb2O5; annealing temperatures; high-resistance state; indium tin oxide-glass substrates; low-resistance state; nonvolatile memory application; polycrystalline microstructure; polycrystalline thin films; resistance ratios; resistance state dispersion; resistance switching characteristics; resistance-switching behaviour; reversible resistance switching behaviour; selected-area diffraction pattern; sol-gel method; steady bistable resistance switching behaviour; switching voltage dispersion;
Journal_Title :
Micro & Nano Letters, IET
DOI :
10.1049/mnl.2011.0318
