• DocumentCode
    1342921
  • Title

    Heavy-Ion Induced Single Event Gate Damage in Medium Voltage Power MOSFETs

  • Author

    Busatto, Giovanni ; Currò, Giuseppe ; Iannuzzo, Francesco ; Porzio, Antonino ; Sanseverino, Annunziata ; Velardi, Francesco

  • Author_Institution
    D.A.E.I.M.I., Univ. of Cassino, Cassino, Italy
  • Volume
    56
  • Issue
    6
  • fYear
    2009
  • Firstpage
    3573
  • Lastpage
    3581
  • Abstract
    Starting from a physical model of the electric field that develops in the gate oxide during heavy-ion irradiation, we have experimentally and numerically investigated the single event gate damage observed in medium voltage power MOSFETs. Simulation results reveal that the total electric field reached during the heavy-ion impact is close to the one that is known to trigger the formation of latent damages during electro-static discharge (ESD) experiments.
  • Keywords
    power MOSFET; electric field; electro-static discharge; heavy-ion induced single event gate damage; latent damages; medium voltage power MOSFET; Charge carrier processes; Electrostatic discharge; Failure analysis; MOS capacitors; MOSFETs; Medium voltage; Operational amplifiers; Paper technology; Silicon; Temperature distribution; Latent gate damage; SEGR; power MOSFETs;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2032397
  • Filename
    5341438
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1342921