Determination of the Charge Collection Efficiency in Neutron Irradiated Silicon Detectors

Author

Petterson, M.K. ; Hurley, R.F. ; Arya, K. ; Betancourt, C. ; Bruzzi, M. ; Colby, B. ; Gerling, M. ; Meyer, C. ; Pixley, J. ; Rice, T. ; Sadrozinski, H.F.-W. ; Scaringella, M. ; Bernardini, J. ; Borrello, L. ; Fiori, F. ; Messineo, A.

Author_Institution

Santa Cruz Inst. for Particle Phys., Univ. of California-Santa Cruz, Santa Cruz, CA, USA

Volume

56

Issue

6

fYear

2009

Firstpage

3828

Lastpage

3833

Abstract

The charge collected from p-type silicon strip sensors irradiated to SuperLHC fluences has been determined with a beta source using fast front-end electronics. The bias voltage dependence of the collected charge and the hit detection efficiency have been measured before and after accelerated annealing. Predictions of the performance at the SuperLHC are derived.

Keywords

neutron effects; nuclear electronics; position sensitive particle detectors; silicon radiation detectors; SuperLHC fluence; accelerated annealing; beta source; charge collection efficiency; detection efficiency; front-end electronics; neutron irradiated silicon detectors; p-type silicon strip sensors; voltage dependence; Annealing; Charge measurement; Current measurement; Detectors; Large Hadron Collider; Magnetic materials; Neutrons; Silicon; Strips; Voltage; Detectors; high-energy physics; radiation damage; silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2033995

Filename

5341447