• DocumentCode
    1343058
  • Title

    Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP

  • Author

    Yuan, Jiaxin ; Chen, Bing ; Holmes, Archie L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
  • Volume
    47
  • Issue
    20
  • fYear
    2011
  • Firstpage
    1144
  • Lastpage
    1145
  • Abstract
    The near-infrared quantum efficiency of pin photodetectors based on a lattice-matched type-II InGaAs/GaAsSb absorption region has been measured. The quantum efficiencies for these devices are 80.2 and 57.8% at 1064 and 1550%nm, respectively. These results are comparable to the more commonly-used InGaAs/InP photodetectors.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; InGaAs-GaAsSb; lattice-matched type-II absorption; near-infrared quantum efficiency; pin photodetectors; quantum wells; uncooled photodetectors; wavelength 1064 nm to 1550 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.2146
  • Filename
    6036068
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1343058