Title :
Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP
Author :
Yuan, Jiaxin ; Chen, Bing ; Holmes, Archie L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
The near-infrared quantum efficiency of pin photodetectors based on a lattice-matched type-II InGaAs/GaAsSb absorption region has been measured. The quantum efficiencies for these devices are 80.2 and 57.8% at 1064 and 1550%nm, respectively. These results are comparable to the more commonly-used InGaAs/InP photodetectors.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; quantum well devices; InGaAs-GaAsSb; lattice-matched type-II absorption; near-infrared quantum efficiency; pin photodetectors; quantum wells; uncooled photodetectors; wavelength 1064 nm to 1550 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.2146
