Title :
Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator
Author :
Rao, R.V.V.V.J. ; Chong, T.C. ; Lau, W.S. ; Tan, L.S. ; Lim, N.
Author_Institution :
Centre for Optoelectron., Nat. Univ. of Singapore, Singapore
fDate :
7/3/1997 12:00:00 AM
Abstract :
Al0.3Ga0.7As epilayers grown at low-temperature (LT) by molecular beam epitaxy (MBE) were used as insulators in the fabrication of MISFET devices. An LT-Al0.3Ga0.7As MISFET, having a gate length of 2 μm, exhibited a transconductance of 161 mS/mm, an IDSS of 320 mA/mm and a maximum drain voltage of 44.7 V, resulting in an I-V product of 1.65 W/mm; it displayed improved frequency dispersion characteristics over that of an LT GaAs MISFET
Keywords :
MISFET; Al0.3Ga0.7As; GaAs; GaAs MISFET device; low-temperature-grown Al0.3Ga0.7As gate insulator; molecular beam epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970805
