DocumentCode
1343089
Title
Low substrate-current and high breakdown voltage JI-LIGBT
Author
Cheng, J.B. ; Zhang, Boming ; Duan, B.X. ; Li, Z.J.
Author_Institution
Sch. of Electron. Sci. & Eng., Nanjing Univ. of Posts & Telecommun., Nanjing, China
Volume
47
Issue
20
fYear
2011
Firstpage
1148
Lastpage
1149
Abstract
A novel bulk junction isolated lateral insulated gate bipolar transistor (JI-LIGBT) with a heavily doped buried-layer in substrate is presented. Due to electric field modulation and current-gain reduction of the vertical parasitic transistor from the buried-layer, in comparison with the conventional LIGBT without a buried-layer, the novel structure offers not only high breakdown voltage but also short turn-off time and significantly low substrate leakage current.
Keywords
buried layers; electric breakdown; electric fields; insulated gate bipolar transistors; leakage currents; bulk junction JI-LIGBT; current-gain reduction; electric field modulation; heavily doped buried-layer; high breakdown voltage; isolated lateral insulated gate bipolar transistor; leakage current; low substrate-current; vertical parasitic transistor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2011.1996
Filename
6036071
Link To Document