Title :
Fabrication of submicrometre 3D periodic structures composed of Si/SiO2
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Miyagi, Japan
fDate :
7/3/1997 12:00:00 AM
Abstract :
The successful fabrication of 3D periodic structures composed of two transparent materials in the submicrometre range is reported for the first time. The material system comprises a-Si (n=3.26) and SiO2 (n=1.46), and sputter-etching leads to `high-fidelity´ layer-to-layer propagation of a concave-convex pattern
Keywords :
amorphous semiconductors; elemental semiconductors; semiconductor-insulator boundaries; silicon; silicon compounds; sputter etching; Si-SiO2; Si/SiO2; amorphous Si; concave-convex pattern; fabrication; sputter-etching; submicron 3D periodic structures; transparent materials;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970844
