Title :
Influence of external circuits on filamentary current flow during impurity breakdown in n-type GaAs
Author :
Kunihiro, K. ; Gaa, M. ; Schöll, E.
Author_Institution :
Inst. fur Theor. Phys., Tech. Univ. Berlin, Germany
fDate :
7/3/1997 12:00:00 AM
Abstract :
Two-dimensional simulations are performed of low-temperature impurity breakdown in an n-type GaAs film connected to a capacitive and resistive external circuit under current controlled conditions. The results confirm that the transition between nearly insulating and highly-conductive states. Where a current filament is formed or decays in the sample, is synchronised with the charging and discharging of a parallel capacitor. Our simulations also indicate a mechanism for self-sustained relaxation oscillations
Keywords :
III-V semiconductors; carrier density; electric breakdown; electrical conductivity transitions; gallium arsenide; impurities; oscillations; relaxation; semiconductor thin films; GaAs; capacitor charging; capacitor discharging; current controlled conditions; external circuit influence; filamentary current flow; low-temperature impurity breakdown; n-type GaAs film; parallel capacitor; self-sustained relaxation oscillations; two-dimensional simulations; voltage oscillations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970849
