Title :
Low threshold, compressively-strained InAsP/InGaAsP and strain-compensated InAsP/InGaP 1.3 μm lasers grown by gas source molecular beam epitaxy
Author :
Uenohara, H. ; Gokhale, M.R. ; Dries, J.C. ; Forrest, S.R.
Author_Institution :
Center for Photonics & Optoelectron. Mater., Princeton Univ., NJ, USA
fDate :
7/3/1997 12:00:00 AM
Abstract :
1.3 μm wavelength strain-compensated InAsP/InGaP/InGaAsP/InP and compressively-strained InAsP/InGaAsP/InP separate confinement heterostructure multiquantum well lasers grown by gas source molecular beam epitaxy are demonstrated for the first time. Record low threshold current densities of 210 A/cm2 for 2 mm long broad-area compressively-strained lasers were obtained
Keywords :
III-V semiconductors; chemical beam epitaxial growth; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; quantum well lasers; 1.3 micron; 2 mm; GSMBE; InAsP-InGaAsP-InP; InAsP-InGaP-InGaAsP-InP; InAsP/InGaAsP lasers; InAsP/InGaP lasers; MQW SCH lasers; broad-area lasers; compressively-strained type; gas source MBE; gas source molecular beam epitaxy; low threshold current densities; multiquantum well lasers; semiconductor lasers; separate confinement heterostructure; strain-compensated type;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970799
