DocumentCode
13433
Title
Domain Wall Memory-Layout, Circuit and Synergistic Systems
Author
Motaman, Seyedhamidreza ; Iyengar, Anirudh Srikant ; Ghosh, Swaroop
Author_Institution
Comput. Sci. & Eng., Univ. of South Florida, Tampa, FL, USA
Volume
14
Issue
2
fYear
2015
fDate
Mar-15
Firstpage
282
Lastpage
291
Abstract
Domain wall memory (DWM) is gaining significant attention for embedded cache application due to low standby power, excellent retention, and ability to store multiple bits per cell. Additionally, it provides fast access time, good endurance, and good retention. However, it suffers from poor write latency, shift latency, shift power, and write power. DWM is sequential in nature and latency of read/write operations depends on the offset of the bit from the read/write head. This paper investigates the circuit design challenges such as bitcell layout, head positioning, utilization factor of the nanowire, shift power, shift latency, and provides solutions to deal with these issues. A synergistic system is proposed by combining circuit techniques such as merged read/write heads (for compact layout), flipped-bitcell and shift gating (for shift power optimization), wordline strapping (for access latency), shift circuit design with two micro-architectural techniques: 1) segmented cache and 2) workload-aware dynamic shift and write current boosting to realize energy-efficient and robust DWM cache. Simulations show 3-33% performance and 1.2-14.4X power consumption improvement for cache segregation and 2.5-31% performance and 1.3-14.9X power enhancement for dynamic current boosting over a wide range of PARSEC benchmarks.
Keywords
integrated circuit design; integrated memory circuits; access latency; bitcell layout; cache segregation; circuit techniques; domain wall memory-layout; dynamic current boosting; flipped-bitcell; head positioning; merged read/write heads; nanowire; segmented cache; shift circuit design; shift gating; shift latency; shift power optimization; synergistic system; utilization factor; wordline strapping; workload-aware dynamic shift and write current boosting; Boosting; Layout; Magnetic heads; Metals; Random access memory; Routing; Transistors; Cache segregation; Domain wall memory; cache segregation; cross-layer design; domain wall memory (DWM); dynamic shift current modulation; dynamic write current modulation; shift power; synergistic systems;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2015.2391185
Filename
7006702
Link To Document