Title :
Measurement of hole traps in SIMOX oxide by avalanche injection
Author :
Bhar, T.N. ; Lawrence, R.K. ; Hughes, Harold L. ; Allen, Lindsay
fDate :
7/3/1997 12:00:00 AM
Abstract :
Avalanche hole injection into a buried oxide formed by ion implantation is successfully used to determine the effective hole trap densities and the corresponding capture cross-sections. The material used for this study was a standard commercial wafer, fabricated by the separation-by-implantation-of-oxygen (SIMOX) process. Analysis of the mid-gap voltage shift in the high frequency capacitance-voltage curve against injected charge reveals the existence of three distinct hole traps with cross-sections about 10 times larger than those found for thermal oxides
Keywords :
SIMOX; buried layers; dielectric thin films; electric variables measurement; hole traps; integrated circuit testing; HF capacitance-voltage curve; SIMOX oxide; Si; avalanche injection; buried oxide; capture cross-sections; effective hole trap densities; hole traps measurement; injected charge; ion implantation; mid-gap voltage shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970813
