Title :
Obtaining high efficiency at low power using a quantum-dot microcavity light-emitting diode
Author :
Huang, H. ; Deppe, D.G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
6/1/2000 12:00:00 AM
Abstract :
Efficiencies are calculated for quantum-dot apertured-microcavity light-emitting diodes. Although the maximum efficiency depends strongly on the quantum-dot inhomogeneous broadening, greater than 20% efficiency is calculated for a small-sized apertured microcavity, even for an inhomogeneous linewidth as large as 30 meV. The efficiency can be increased to 40% if the inhomogeneous linewidth is reduced to 10 meV and to more than 60% if the inhomogeneous linewidth is eliminated to leave a homogeneous linewidth of 6.6 meV. The maximum output powers are /spl sim/40 nW, although a microarray can increase this value. For the case of a single quantum dot, an efficiency >80% is estimated for a submicron apertured-microcavity, with a maximum output power of /spl sim/3 nW.
Keywords :
light emitting diodes; micro-optics; micromechanical resonators; optical arrays; optical resonators; semiconductor quantum dots; spectral line breadth; 10 meV; 20 percent; 3 nW; 40 nW; 40 percent; 6.6 meV; 80 percent; high efficiency; inhomogeneous linewidth; low power; maximum output power; maximum output powers; quantum-dot apertured-microcavity LED; quantum-dot apertured-microcavity light-emitting diodes; quantum-dot inhomogeneous broadening; quantum-dot microcavity light-emitting diode; single quantum dot; small-sized apertured microcavity; submicron apertured-microcavity; Etching; Light emitting diodes; Microcavities; Mirrors; Optical control; Optical resonators; Power generation; Quantum dot lasers; Quantum dots; Semiconductor diodes;
Journal_Title :
Quantum Electronics, IEEE Journal of