A Charge-Multiplication CMOS Image Sensor Suitable for Low-Light-Level Imaging

Author

Shimizu, Ryu ; Arimoto, Mamoru ; Nakashima, Hayato ; Misawa, Kaori ; Ohno, Toshikazu ; Nose, Yugo ; Watanabe, Keisuke ; Ohyama, Tatsushi

Author_Institution

Sanyo Electr. Adv. Devices Res. Center, Anpachi, Japan

Volume

44

Issue

12

fYear

2009

Firstpage

3603

Lastpage

3608

Abstract

A highly sensitive charge-multiplication CMOS image sensor was fabricated. The 10 Â¿m pixel pitch and CIF image format sensor has an array of unit pixels comprising photodiode region, charge multiplication unit, and source follower charge-to-voltage conversion circuit within each pixel. Thanks to the well-controlled charge multiplication sequence utilizing CCD charge transfer technology, a high efficiency signal multiplication was achieved without significant increase of charge multiplication noises. And there is little dispersion of multiplication gain in the whole imaging area so suitable dark-field imaging of about 0.4 1x has been achieved.

Keywords

CMOS image sensors; amplifiers; charge-coupled devices; impact ionisation; photodiodes; CCD charge transfer technology; CIF image format sensor; charge multiplication CMOS image sensor; dark-field imaging; impact ionization; low light level imaging; multiplication gain; photodiode; signal multiplication; source follower charge-voltage conversion circuit; unit pixel array; CMOS image sensors; CMOS technology; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Circuits; Image converters; Photodiodes; Pixel; Sensor arrays; CCD; CMOS image sensor; charge multiplication; charge transfer; impact ionization; low light level; noise;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2009.2035541

Filename

5342347