Title :
A Charge-Multiplication CMOS Image Sensor Suitable for Low-Light-Level Imaging
Author :
Shimizu, Ryu ; Arimoto, Mamoru ; Nakashima, Hayato ; Misawa, Kaori ; Ohno, Toshikazu ; Nose, Yugo ; Watanabe, Keisuke ; Ohyama, Tatsushi
Author_Institution :
Sanyo Electr. Adv. Devices Res. Center, Anpachi, Japan
Abstract :
A highly sensitive charge-multiplication CMOS image sensor was fabricated. The 10 ¿m pixel pitch and CIF image format sensor has an array of unit pixels comprising photodiode region, charge multiplication unit, and source follower charge-to-voltage conversion circuit within each pixel. Thanks to the well-controlled charge multiplication sequence utilizing CCD charge transfer technology, a high efficiency signal multiplication was achieved without significant increase of charge multiplication noises. And there is little dispersion of multiplication gain in the whole imaging area so suitable dark-field imaging of about 0.4 1x has been achieved.
Keywords :
CMOS image sensors; amplifiers; charge-coupled devices; impact ionisation; photodiodes; CCD charge transfer technology; CIF image format sensor; charge multiplication CMOS image sensor; dark-field imaging; impact ionization; low light level imaging; multiplication gain; photodiode; signal multiplication; source follower charge-voltage conversion circuit; unit pixel array; CMOS image sensors; CMOS technology; Charge coupled devices; Charge transfer; Charge-coupled image sensors; Circuits; Image converters; Photodiodes; Pixel; Sensor arrays; CCD; CMOS image sensor; charge multiplication; charge transfer; impact ionization; low light level; noise;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2009.2035541
