Title :
Monolithic circuit for reflection coefficient measurement
Author :
Neidert, Robert E.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
Abstract :
A monolithic circuit for measuring the complex reflection coefficient using fixed-probe voltage sampling has been investigated. Ion-implanted GaAs Schottky diodes, with built-in isolation resistance, have been used as voltage samplers along a microstrip transmission line on semi-insulating GaAs. An algorithm for determining reflection coefficient from three detected DC voltages is described. Circuit analysis and modeling, DC voltage calculations, and experimental results for the 5-18 GHz frequency range are presented.<>
Keywords :
III-V semiconductors; MMIC; Schottky-barrier diodes; integrated circuit testing; microwave reflectometry; 5 to 18 GHz; DC voltage calculations; GaAs; SHF; Schottky diodes; built-in isolation resistance; circuit analysis; complex reflection coefficient; fixed-probe voltage sampling; ion implanted diodes; microstrip transmission line; modeling; monolithic circuit; reflection coefficient measurement; semi-insulating GaAs; Circuit analysis; Distributed parameter circuits; Electrical resistance measurement; Gallium arsenide; Microstrip; Reflection; Sampling methods; Schottky diodes; Transmission line measurements; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
