Optically Assisted Charge Pumping on Floating-Body FETs

Author

Kim, Sungho ; Choi, Sung-Jin ; Choi, Yang-Kyu

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

31

Issue

12

fYear

2010

Firstpage

1365

Lastpage

1367

Abstract

An optical charge-pumping (CP) method is proposed to extract the interface trap density in floating-body (FB) field-effect transistors (FETs). Optically generated majority carriers are removed from the FB by applying a burst of charge-pumping pulses to the gate. The change of the drain current after each CP pulse is used to determine the interface trap density. The advantage of this method lies in the possibility to characterize FB FETs without the unnecessary generation of interface traps by measurement bias. In addition, it can be applied to various types of FB devices directly without structural modification.

Keywords

charge pump circuits; field effect transistors; interface states; CP pulse; FB devices; drain current; field-effect transistors; floating-body FET; interface trap density; optically-assisted charge pumping; Charge pumps; Current measurement; Electron devices; Logic gates; Optical pulses; Optical pumping; Optical variables measurement; Charge pumping (CP); floating-body (FB); interface trap; silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistor (MOSFET);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2072903

Filename

5594987