DocumentCode
1343810
Title
The study of the relation between Rn-Gn noise model and En-In noise model of an amplifier
Author
Xu, Jiansheng ; Dai, Yisong ; Yaqen, Li
Author_Institution
Dept. of Electron. Eng., Jilin Univ., Changchun, China
Volume
45
Issue
2
fYear
1998
fDate
2/1/1998 12:00:00 AM
Firstpage
154
Lastpage
156
Abstract
The Rn-Gn noise model can only be used in the case of microwave low-noise amplifier design. Its application scopes are limited and in particular, it cannot be used in low-frequency low-noise amplifier design. This paper has adopted the En-I n noise model with spectral correlative coefficient (SCC) so that it can be used not only in high-frequency and narrow-band, but also in low frequency, source reactance, and wide-band amplifier low-noise design. In this paper, the equivalent relation between the En-In noise model and the Rn-Gn , noise model is derived, and the measurement method of the En-In noise model parameters and the measurement results are given. The Rn-Gn, noise model parameters can be accurately obtained by use of the equivalent relation
Keywords
amplifiers; circuit noise; microwave amplifiers; network synthesis; preamplifiers; wideband amplifiers; HF narrowband amplifier design; high-frequency amplifier design; low-frequency LNA design; low-noise amplifier design; noise model parameters; noise models; source reactance; spectral correlative coefficient; wideband amplifier design; Admittance; Broadband amplifiers; Circuit noise; Impedance; Low-frequency noise; Low-noise amplifiers; Narrowband; Noise figure; Noise measurement; Power system modeling;
fLanguage
English
Journal_Title
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher
ieee
ISSN
1057-7122
Type
jour
DOI
10.1109/81.661680
Filename
661680
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