21-dB gain ultra-wideband complementary metal-oxide semiconductor low-noise amplifier with current-reuse technique

A high-gain and wideband low-noise amplifier (LNA) employing a current-reuse technique is proposed. The current-reuse technique adopted at the first stage yields an exceptionally high gain due to the summation of n-type metal-oxide semiconductor (MOS) and p-type MOS transconductances, showing wide input matching with the aid of source inductors and load effects. The proposed LNA achieves better than 10-dB input return loss from 3.0 to 9.2-GHz, a minimum noise figure of 2.9-dB, a maximum power gain of 21-dB, a gain-bandwidth product of 554-GHz and a figure of merit of 31.8-GHz/mW while consuming 12.8-mW from 7.1-mA and 1.8-V. The proposed LNA is fabricated using a 0.18-μm complementary MOS process.