Title :
The microstrip laser
Author :
Tauber, D. ; Horita, M. ; Piprek, J. ; Abraham, P. ; Holmes, A.L., Jr. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
We present a novel semiconductor laser structure, the microstrip laser, where the epitaxial laser layers sit directly above a thick gold layer, instead of on a conventional semiconductor substrate. This design provides advantages for both high frequency and high-power performance compared to conventional ridge waveguide structures. Results indicative of an improved structure are presented, including a factor of 3 reduction in the thermal resistance of the microstrip laser compared to a conventional laser.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; metallic epitaxial layers; optical films; semiconductor lasers; substrates; Au; InGaAsP; InGaAsP microstrip semiconductor laser calculations; epitaxial laser layers; high frequency; high-power performance; microstrip laser; ridge waveguide structures; semiconductor laser structure; thermal resistance; thick gold layer; Erbium-doped fiber lasers; Gold; Heat sinks; Laser beam cutting; Microstrip; Pump lasers; Semiconductor lasers; Substrates; Thermal resistance; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
