The microstrip laser

Author

Tauber, D. ; Horita, M. ; Piprek, J. ; Abraham, P. ; Holmes, A.L., Jr. ; Bowers, J.E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

10

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

478

Lastpage

480

Abstract

We present a novel semiconductor laser structure, the microstrip laser, where the epitaxial laser layers sit directly above a thick gold layer, instead of on a conventional semiconductor substrate. This design provides advantages for both high frequency and high-power performance compared to conventional ridge waveguide structures. Results indicative of an improved structure are presented, including a factor of 3 reduction in the thermal resistance of the microstrip laser compared to a conventional laser.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; metallic epitaxial layers; optical films; semiconductor lasers; substrates; Au; InGaAsP; InGaAsP microstrip semiconductor laser calculations; epitaxial laser layers; high frequency; high-power performance; microstrip laser; ridge waveguide structures; semiconductor laser structure; thermal resistance; thick gold layer; Erbium-doped fiber lasers; Gold; Heat sinks; Laser beam cutting; Microstrip; Pump lasers; Semiconductor lasers; Substrates; Thermal resistance; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.662566

Filename

662566