Improved high-temperature characteristics in a thickness-tapered 1.3-μm beam-expander integrated ridge-waveguide laser

Author

Sato, H. ; Aoki, M. ; Tsuchiya, T. ; Komori, M. ; Taike, A. ; Takahashi, M. ; Uomi, K. ; Tsuji, S.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

10

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

484

Lastpage

486

Abstract

High-temperature performance of a beam-expander (BEX) integrated laser was dramatically improved by reducing the current leakage in both longitudinal and lateral directions. Proton implantation into the BEX region and a reverse-mesa structure were combined to improve the high-temperature characteristics. A threshold current of 23.1 mA at 85/spl deg/C and a very high-characteristic temperature T/sub 0/ (25/spl deg/C-85/spl deg/C) of 74 K were achieved. Stable operation for over 3000 h under a 10-mW output power at 70/spl deg/C were confirmed.

Keywords

infrared sources; integrated optics; ion implantation; laser stability; laser transitions; life testing; optical testing; quantum well lasers; ridge waveguides; semiconductor device testing; waveguide lasers; 1.3 mum; 10 mW; 23.1 mA; 3000 h; 70 C; 74 K; 85 C; current leakage; high-temperature characteristics; lateral directions; longitudinal directions; mW output power; proton implantation; reverse-mesa structure; stable operation; thickness-tapered 1.3-/spl mu/m beam-expander integrated ridge-waveguide laser; threshold current; very high-characteristic temperature; Epitaxial growth; Fiber lasers; Optical coupling; Optical fibers; Optical losses; Power generation; Protons; Quantum well devices; Temperature; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.662568

Filename

662568