1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well lasers with a p-AlInAs electron stopper layer

Author

Takemasa, K. ; Munakata, T. ; Kobayashi, M. ; Wada, H. ; Kamijoh, T.

Author_Institution

Res. & Dev. Group, Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

10

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

495

Lastpage

497

Abstract

1.3-μm AlGaInAs-AlGaInAs strained multiple-quantum-well (MQW) lasers with a p-AlInAs electron stopper layer have been fabricated. The electron stopper layer was inserted between the MQW and p-side separate confinement heterostructure (SCH) layers to suppress the electron overflow from the MQW to p-SCH. The characteristic temperatures of the threshold currents and slope efficiencies were improved in the lasers with the stopper layers, especially at higher temperatures. As a result, a maximum operating temperature of 155/spl deg/C was achieved, which was 20/spl deg/C higher than that without the stopper layer.

Keywords

Debye temperature; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; optical fabrication; quantum well lasers; 1.3 mum; 155 C; AlGaInAs-AlGaInAs; AlGaInAs-AlGaInAs strained MQW lasers; AlGaInAs-AlGaInAs strained multiple-quantum-well lasers; characteristic temperatures; electron overflow; electron stopper layer; maximum operating temperature; p-AlInAs electron stopper layer; p-side separate confinement heterostructure layers; slope efficiencies; threshold currents; Electrons; Light sources; Optical interconnections; Quantum well devices; Quantum well lasers; Semiconductor lasers; Subscriber loops; Temperature distribution; Thermoelectricity; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.662572

Filename

662572