Title :
Single-mode AlGaAs-GaAs lasers using lateral confinement by native-oxide layers
Author :
Heerlein, J. ; Grabherr, M. ; Jager, R. ; Unger, P.
Author_Institution :
Dept. of Optoelectron., Ulm Univ., Germany
fDate :
4/1/1998 12:00:00 AM
Abstract :
We report on results of wet oxidized narrow-stripe QW laser diodes operating in single lateral and longitudinal mode around an emission wavelength of 850 nm. Devices with an active width of 4-10 μm achieved output powers of up to 240 mW in continuous-wave (CW) operation at room temperature.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; laser transitions; oxidation; quantum well lasers; refractive index; 240 mW; 4 to 10 mum; 850 nm; AlGaAs-GaAs; CW operation; QW laser diodes; active width; emission wavelength; lateral confinement; longitudinal mode; native-oxide layers; output powers; room temperature; single-mode AlGaAs-GaAs lasers; wet oxidized narrow-stripe laser diodes; Laser modes; Laser noise; Molecular beam epitaxial growth; Optical waveguides; Power generation; Refractive index; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
