• DocumentCode
    1344096
  • Title

    Linear Characteristics of a Metal–Insulator Transition Voltage and Oscillation Frequency in \\hbox {VO}_{2} Devices

  • Author

    Kim, Bong-Jun ; Seo, Giwan ; Lee, Yong Wook ; Choi, Sungyoul ; Kim, Hyun-Tak

  • Author_Institution
    MIT Device Team, Electron. & Telecommun. Res. Inst., Daejeon, South Korea
  • Volume
    31
  • Issue
    11
  • fYear
    2010
  • Firstpage
    1314
  • Lastpage
    1316
  • Abstract
    In order to apply a VO2 metal-insulator transition (MIT) device to a temperature sensor with temperature and voltage, we measure the linear characteristic of the MIT voltage for a VO2-based device when a pulse voltage of 10 μs is applied to the device to reduce Joule heat. Moreover, the MIT oscillation frequency and the infrared-induced MIT voltage also are linear with temperature. The linear characteristic may come from the breakdown of an energy gap by excitation.
  • Keywords
    metal-insulator transition; temperature sensors; vanadium compounds; Joule heat reduction; MIT oscillation frequency; MIT voltage linear characteristic; VO2; energy gap breakdown; infrared-induced MIT voltage; metal-insulator transition voltage device; pulse voltage; temperature sensor; time 10 mus; Neodymium; Oscillators; Semiconductor device measurement; Temperature dependence; Temperature measurement; Temperature sensors; Voltage measurement; Linear; metal–insulator transition (MIT); oscillation; temperature sensor;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2068275
  • Filename
    5595090