DocumentCode :
1344102
Title :
Temporal dynamics and facet coating requirements of monolithic MOPA semiconductor lasers
Author :
Wright, Malcolm W. ; Bossert, David J.
Volume :
10
Issue :
4
fYear :
1998
fDate :
4/1/1998 12:00:00 AM
Firstpage :
504
Lastpage :
506
Abstract :
Dynamics of temporal instabilities in tapered broad-area InGaAs SQW semiconductor master oscillator/power amplifier lasers are experimentally investigated. Multigigahertz self-pulsations are evident in the optical and temporal spectra along with coupled-cavity modes due to the finite output-facet reflectivity. From a previously developed time-dependent coupled-wave model, it is shown that by adjusting the grating strength in the distributed Bragg reflector (DBR) section of the master oscillator the antireflection facet coating requirements can be relaxed. Increased stable operation at high powers is then possible.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser stability; laser theory; optical films; quantum well lasers; reflectivity; semiconductor device models; DBR; InGaAs; antireflection facet coating requirements; coupled-cavity modes; distributed Bragg reflector; facet coating requirements; finite output-facet reflectivity; grating strength; high powers; master oscillator; monolithic MOPA semiconductor lasers; multigigahertz self-pulsations; stable operation; tapered broad-area InGaAs SQW semiconductor master oscillator/power amplifier lasers; temporal dynamics; temporal instabilities; temporal spectra; time-dependent coupled-wave model; Coatings; Distributed Bragg reflectors; Indium gallium arsenide; Laser modes; Oscillators; Power amplifiers; Power lasers; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.662575
Filename :
662575
Link To Document :
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