Temporal dynamics and facet coating requirements of monolithic MOPA semiconductor lasers

Author

Wright, Malcolm W. ; Bossert, David J.

Volume

10

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

504

Lastpage

506

Abstract

Dynamics of temporal instabilities in tapered broad-area InGaAs SQW semiconductor master oscillator/power amplifier lasers are experimentally investigated. Multigigahertz self-pulsations are evident in the optical and temporal spectra along with coupled-cavity modes due to the finite output-facet reflectivity. From a previously developed time-dependent coupled-wave model, it is shown that by adjusting the grating strength in the distributed Bragg reflector (DBR) section of the master oscillator the antireflection facet coating requirements can be relaxed. Increased stable operation at high powers is then possible.

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser stability; laser theory; optical films; quantum well lasers; reflectivity; semiconductor device models; DBR; InGaAs; antireflection facet coating requirements; coupled-cavity modes; distributed Bragg reflector; facet coating requirements; finite output-facet reflectivity; grating strength; high powers; master oscillator; monolithic MOPA semiconductor lasers; multigigahertz self-pulsations; stable operation; tapered broad-area InGaAs SQW semiconductor master oscillator/power amplifier lasers; temporal dynamics; temporal instabilities; temporal spectra; time-dependent coupled-wave model; Coatings; Distributed Bragg reflectors; Indium gallium arsenide; Laser modes; Oscillators; Power amplifiers; Power lasers; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.662575

Filename

662575