Title :
High-input-power saturation properties of a polarization-insensitive semiconductor Mach-Zehnder interferometer gate switch for WDM applications
Author :
Yoshimoto, Naoto ; Shibata, Yasuo ; Oku, Satoshi ; Kondo, Susumu ; Noguchi, Yoshio
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
4/1/1998 12:00:00 AM
Abstract :
We propose that a polarization-insensitive Mach-Zehnder interferometer (MZI) switch is useful for optical gate elements, especially if multiwavelength signals are input. This device has high-input-power saturation properties, which shows that both the operating voltage and the extinction ratio do not change when the optical input power reaches at least +18 dBm. A high extinction ratio of 30 dB was achieved in the wide-wavelength range of 20 nm. Moreover, the extinction ratio can be improved by up to 45 dB by using a cascaded configuration to decrease crosstalk. These results indicate the MZI gate switch is well suited to wavelength-division multiplexing (WDM) network components.
Keywords :
Mach-Zehnder interferometers; electro-optical switches; integrated optics; light polarisation; optical communication equipment; optical crosstalk; optical saturation; sensitivity; wavelength division multiplexing; MZI gate switch; WDM applications; WDM network components; cascaded configuration; extinction ratio; high extinction ratio; high-input-power saturation properties; multiwavelength signals; operating voltage; optical gate elements; optical input power; polarization-insensitive semiconductor Mach-Zehnder interferometer gate switch; wide-wavelength range; Extinction ratio; Optical crosstalk; Optical devices; Optical interferometry; Optical polarization; Optical saturation; Optical switches; Voltage; WDM networks; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE