Title :
Microlens-integrated large-area InAlGaAs-InAlAs superlattice APD´s for eye-safety 1.5-μm wavelength optical measurement use
Author :
Hayashi, Mariko ; Watanabe, Issei ; Nikata, T. ; Makita, Kikuo ; Yamakata, S. ; Taguchi, Katsuhisa
Author_Institution :
Optoelectron. & High Frequency Device Res. Labs., NEC Corp., Ibaraki, Japan
fDate :
4/1/1998 12:00:00 AM
Abstract :
The advanced optical measurement system used in the eye-safety 1.5-μm wavelength range requires high-sensitivity photodiodes with a large detecting area. For this purpose, we have developed large-area InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APD´s) integrated with a monolithic microlens. By optimizing the superlattice multiplication layer as well as using a monolithically integrated microlens, a low multiplied dark current of 5 nA and a large detecting area of 200 μm in diameter have been achieved for 100-μm-mesa-diameter SL-APD´s.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; infrared detectors; integrated optics; lenses; optical communication equipment; safety; semiconductor superlattices; 1.5 mum; 100 mum; 200 mum; 5 nA; IR wavelength optical measurement; InAlGaAs-InAlAs; advanced optical measurement system; eye-safety; high-sensitivity photodiodes; large detecting area; large-area InAlGaAs-InAlAs superlattice APD; large-area InAlGaAs-InAlAs superlattice avalanche photodiodes; low multiplied dark current; mesa-diameter; microlens-integrated; monolithic microlens; superlattice multiplication layer optimisation; Area measurement; Dark current; Ionization; Lenses; Microoptics; Optical fiber communication; Optical noise; Optical receivers; Optical superlattices; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
