Title :
A comparative study of integrated photoreceivers using MSM/HEMT and PIN/HEMT technologies
Author :
Fay, P. ; Wohlmuth, W. ; Mahajan, A. ; Caneau, C. ; Chanrasekhar, S. ; Adesida, I.
Author_Institution :
Dept. of Electr. Eng., Notre Dame Univ., IN, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
An experimental comparative study of PIN/HEMT and MSM/HEMT monolithically integrated photoreceivers for high-speed long-wavelength telecommunications systems is presented. The monolithic integration of the photodetector (either MSM or PIN) with the HEMT used a stacked layer structure design grown by OMVPE. Detector areas and amplifier feedback resistances were selected to result in similar bandwidths and responsivities for both the MSM- and PIN-based photoreceivers. Sensitivities for the MSM-HEMT photoreceivers were measured to be -16.9 dBm and -10.7 dBm at 5 Gb/s and 10 Gb/s, respectively for a bit-error ratio (BER) of 10/sup -9/ and 2/sup 7/-1 pattern length PRBS data. Corresponding performance for the PIN/HEMT photoreceivers was -18.4 and -15.8 dBm. To the author´s knowledge, this is the first direct experimental comparison of MSM- and PIN-based technologies for high-speed monolithic photoreceiver applications.
Keywords :
HEMT integrated circuits; high-speed optical techniques; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; p-i-n photodiodes; photodetectors; semiconductor growth; vapour phase epitaxial growth; 10 Gbit/s; 2/sup 7/-1 pattern length; 5 Gbit/s; MSM-HEMT photoreceivers; MSM-based photoreceivers; MSM/HEMT technologies; OMVPE growth; PIN-based photoreceivers; PIN/HEMT photoreceivers; PIN/HEMT technologies; amplifier feedback resistances; bit-error ratio; detector areas; high-speed long-wavelength telecommunications systems; high-speed monolithic photoreceiver applications; integrated photoreceivers; monolithically integrated photoreceivers; photodetector; responsivities; sensitivities; stacked layer structure design; Bandwidth; Detectors; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; PIN photodiodes; Photodetectors; Semiconductor device noise;
Journal_Title :
Photonics Technology Letters, IEEE
