Stacked silicon CMOS circuits with a 40-Mb/s through-silicon optical interconnect

Author

Vendier, O. ; Bond, S.W. ; Myunghee Lee ; Sungyung Jung ; Brooke, M. ; Jokerst, N.M. ; Leavitt, R.P.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

10

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

606

Lastpage

608

Abstract

Optical interconnection through stacked silicon foundry complementary metal-oxide-semiconductor (CMOS) circuitry has been demonstrated at a data rate of over 40 Mb/s with an open eye diagram. The system consists of a 0.8-μm transmitter and receiver realized in foundry digital CMOS. The use of digital CMOS enables on-chip integration with more complex digital systems, such as a microprocessor. Two layers of these circuits were integrated with thin-film InP-based light emitting diodes and metal-semiconductor-metal photodetectors operating at 1.3 μm (to which the silicon is transparent) to enable vertical optical through-Si-communication between the stacked silicon circuits.

Keywords

CMOS integrated circuits; integrated optoelectronics; light emitting diodes; metal-semiconductor-metal structures; optical interconnections; photodetectors; silicon; transparency; 0.8 mum; 1.3 mum; 40 Mbit/s; InP; Si; complex digital systems; digital CMOS; foundry digital CMOS; metal-semiconductor-metal photodetectors; microprocessor; on-chip integration; open eye diagram; receiver; silicon optical interconnect; stacked silicon CMOS circuits; stacked silicon circuits; stacked silicon foundry complementary metal-oxide-semiconductor circuitry; thin-film InP-based light emitting diodes; through-Si-communication; transmitter; Circuits; Digital systems; Foundries; Microprocessors; Optical interconnections; Optical receivers; Optical transmitters; Signal analysis; Silicon; System-on-a-chip;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.662609

Filename

662609