Title :
Three-Terminal Probe Reconfigurable Phase-Change Material Switches
Author :
Lo, Hsinyi ; Chua, Engkeong ; Huang, Jian Cheng ; Tan, Chun Chia ; Wen, Cheng-Yuan ; Zhao, Rong ; Shi, Luping ; Chong, Chong Tow ; Paramesh, Jeyanandh ; Schlesinger, T.E. ; Bain, James A.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We present the realization of a novel three-terminal electronic switch using phase-change (PC) chalcogenide material. This device subdivides a single PC switch into a parallel array of three-terminal subvias which are addressed with atomic-force-microscopy cantilever probes. This subdivision reduces the required switching current to acceptable levels. Vias of Ge50Sb50 are demonstrated in this switch topology and are switched between high- and low-resistance states. The vias show an off/on resistance ratio of approximately 100×, which can be applied in radio-frequency switching applications. This dynamic range is 10× less than that observed in sheet films of this material, with the main loss being a reduction in resistivity between the sheet-film off-state and the device off-state. The device off -state resistivity is similar in the as-fabricated state and the reamorphized state.
Keywords :
atomic force microscopy; germanium compounds; switches; Ge50Sb50; PC switch; as-fabricated state; atomic-force-microscopy cantilever probes; device off -state resistivity; parallel array; phase-change chalcogenide material; radio-frequency switching applications; reamorphized state; sheet-film off-state; switch topology; three-terminal electronic switch; three-terminal subvias; Circuit topology; Conductivity; Crystalline materials; Dynamic range; Optical materials; Optical switches; Parasitic capacitance; Probes; Radio frequency; Sheet materials; Conductive atomic force microscopy (AFM); phase-change (PC) material; probe; programmable; reconfigurable; via;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2035533
